• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Here, according to the disclosed program method of a flash memory device, first, flash memory cells according to word / byte units among flash memory cells of a memory cell array are selected. Then, the selected memory cells are sequentially programmed to a predetermined threshold voltage lower than a target threshold voltage. Thereafter, the selected flash memory cells are programmed sequentially or simultaneously into groups of flash memory cells from the predetermined threshold voltage to the target threshold voltage. According to this program algorithm, even if the degree of integration of the flash memory device is increased, a sufficient amount of current required for the program can be supplied without increasing the size of the integrated circuit die due to the charge pump circuit.
    公开号:KR20010010734A
    申请号:KR1019990029786
    申请日:1999-07-22
    公开日:2001-02-15
    发明作者:이두섭
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    High-density NOR-type flash memory device and its programming method {HIGH-DENSITY NOR-TYPE FLASH MEMORY DEVICE AND A PROGRAMMING METHOD THEREOF}
    The present invention relates to a flash memory device, and more particularly, to a high density NOR type flash memory device operating at a low voltage and a program method thereof.
    Flash memory devices are commonly used in a wide variety of computer systems as nonvolatile information storage media. Flash memory devices typically include an erase circuit for erasing memory cells as well as a program circuit for programming information into flash memory cells. However, the voltage levels required for such program and erase circuits are different from the power supply voltage levels available from the power supply of the computer system.
    Some flash memory devices require various voltage sources for supplying program and erase circuits. For example, a separate high voltage for the power supply voltage and the program circuit is required for the flash memory device. The need for two voltage sources not only complicates the power system design of a computer system using two voltage sources, but also increases the overall cost of the system.
    In contrast, flash memory devices of a single voltage source typically include specific circuitry that generates the voltage and current required to program and erase flash memory cells. Such a flash memory device includes a charge pump circuit that converts a single power supply to the appropriate voltage level required to drive input data to flash memory cells during a program.
    Modern computer systems, such as portable computers, use many integrated circuits that operate at relatively low supply voltage levels compared to earlier systems. For example, computer systems that used 5V supply voltage are advancing to 3V or lower supply voltages.
    Unfortunately, the amount of electrical program current that can be generated by the charge pump circuit in flash memory devices is substantially limited due to such low supply voltage levels. As the available program current is limited, the overall speed of such flash memory devices will be reduced because the number of simultaneously programmable flash memory cells is limited.
    Theoretically, under low power supply voltage, the current required to program all flash memory cells in bytes or words simultaneously will be supplied by implementing a charge pump circuit larger and more complex. If the supply voltage level is lowered, for example lower than 2V, the charge pump circuit will become larger and more complex. Due to this, such a charge pump circuit occupies a large area of an integrated circuit die (or chip). The large area for integrated circuit die space dedicated to the charge pump circuit will reduce the die space available for flash memory cells and associated access circuits. As a result, the overall storage capacity of the flash memory device will be limited. In addition, the large area of die space requires a significant increase in the overall size of the integrated circuit die, which contributes to an increase in manufacturing costs.
    It is an object of the present invention to provide a high density NOR type flash memory device and a program method thereof that can reduce the size of a charge pump by reducing the maximum current consumed during a program operation.
    It is still another object of the present invention to provide a high density NOR type flash memory device capable of shortening program time and a program method thereof.
    1 is a cross-sectional view showing the structure of a flash memory cell;
    2 shows the relationship between cell current and program time according to a method of programming two data bits simultaneously;
    3 illustrates a relationship between a threshold voltage of a flash memory cell and a program time while a program operation is performed;
    4 is a diagram illustrating a change of a threshold voltage and a cell current with a program time;
    5 is a block diagram showing a flash memory device according to a first embodiment of the present invention;
    6 is a diagram showing a relationship between a cell current and a program time according to the programming method of the first embodiment of the present invention;
    7 is a block diagram showing a NOR type flash memory device according to a second preferred embodiment of the present invention;
    8 is a block diagram showing the pump circuit of FIG.
    9 is a diagram illustrating a change in a threshold voltage and a program time of a flash memory cell according to a change in a drain voltage supplied to a bit line;
    10A shows the charge supply capability of the charge pump;
    10b is a diagram showing a current change according to the stage and the supply voltage of the charge pump; And
    10c is a diagram showing a change in current capacity according to the pump stage.
    * Brief description of the main parts of the drawing
    2: substrate 3: source region
    4: drain region 5, 7: insulating film
    6: floating gate 8: control gate
    100: flash memory device 110: memory cell array
    120: row decoder 130: column decoder
    140: heat pass gate 150: program section control circuit
    160: data input buffer circuit 170: selection circuit
    180: pump circuit 190: write driver circuit
    (Configuration)
    According to a feature of the invention, a program method of a NOR flash memory device having an array of flash memory cells arranged in rows and columns is provided. According to the programming method, firstly, flash memory cells to be programmed in byte / word units are selected by a row decoder, a column decoder and a column pass gate. Then, during the first program operation, the selected flash memory cells are sequentially programmed to a predetermined threshold voltage lower than a target threshold voltage, and then during the second program operation, the selected memory cells are the target threshold voltage at the predetermined threshold voltage. Voltage can be programmed simultaneously or sequentially into multiple groups. This program operation may be performed by a program interval control circuit, a selection circuit, a pump circuit and a write driver circuit.
    In this embodiment, each of the columns corresponding to each of the selected memory cells is driven with a drain voltage having a different level from each other in the first program operation and the second program operation.
    In this embodiment, the drain voltage supplied to the columns corresponding to the selected memory cells respectively during the first program operation is higher than the drain voltage supplied to the columns corresponding to the selected memory cells respectively during the second program operation.
    According to another aspect of the present invention, there is provided a NOR flash memory device comprising: an array of a plurality of memory cells arranged in rows and columns; A row decoder for selecting one of the rows; A column selection circuit for selecting a group of columns of the columns; A pump circuit for generating a drain voltage to be supplied to the selected columns while a program operation is performed; A program interval control circuit for generating first and second program interval signals representing a program interval of memory cells designated by the selected rows and columns; A selection circuit for generating selection signals for designating the selected columns in response to data bits to be programmed in the designated memory cells and the first and second program interval signals; A write driver circuit for driving the selected columns to a drain voltage from the pump circuit in response to the selection signals, wherein the program duration control circuitry includes each of the selected memory cells up to a predetermined threshold voltage lower than a target threshold voltage. Generate the first program interval control signals corresponding to each of the selected memory cells to be programmed sequentially, and generate the second program interval signal such that the selected memory cells are programmed simultaneously from the predetermined threshold voltage to the target threshold voltage. do.
    (Action)
    According to such an apparatus and method, even if the density of a NOR-type flash memory device is increased and the power supply voltage used in the memory device is lowered, a sufficient amount of current required for the program can be supplied without increasing the size of the integrated circuit die due to the charge pump circuit. Can be.
    (Example)
    Preferred embodiments of the present invention are described in detail below on the basis of reference drawings.
    Referring to FIG. 1, which shows a cross-sectional view of a flash memory cell, a flash memory cell is formed of n + type source and drain regions 3 and 4 formed on a p-type substrate 2, and a thin insulating film 5 of 100 μs or less. A floating gate 6 formed on the channel region with a gap between them, and a control gate formed on the floating gate 6 with another insulating film 7 (or ONO film) therebetween ( 8)
    The flash memory cell of FIG. 1 grounds the source region 3 and the substrate 2, applies a high voltage (Vg) of about + 10V to the control gate 8, and about + 5V to the drain region 4 It is programmed by applying a voltage Vd of + 6V. When a predetermined time (unit program time) has elapsed under such a voltage condition, negative charge from the channel region adjacent to the drain region 4 is sufficiently injected into the floating gate 6. At this time, the floating gate 6 has a negative potential, which serves to increase the threshold voltage of the flash memory cell during a read operation. The flash memory cell in such a state is called an "off cell". When a voltage Vd of about + 5V to + 6V is applied to the drain region 4 of the flash memory cell during the program, a cell current of about 200 μA per flash memory cell is grounded in the drain region 4 through the channel region. Flow into the source region (3).
    As is well known to those skilled in the art, selected flash memory cells of a flash memory device, in particular a NOR type flash memory device, are programmed in units of bytes or words. If data bits in bytes / words are programmed simultaneously, a current of up to 1.6 mA (200 mA × 8) in byte units and a current of 3.2 mA (200 mA × 16) in word units is required. During programming, in order to generate a voltage (Vd) of about + 5V to + 6V applied to the drain region 4 and at the same time to generate a large capacity (for example, 1.6 mA or 3.2 mA), a very large capacity A charge pump will be required. As such, as described above, the charge pump occupies a large area of the integrated circuit die. The large area of the integrated circuit die for the charge pump causes a reduction in the die space available for flash memory cells and associated access circuits. After all, as it limits the overall storage capacity of the flash memory device, a large area of die space for the charge pump requires a significant increase in the overall size of the integrated circuit die (which means that the size of the integrated circuit die becomes larger). . In addition, when a large amount of cell current is consumed momentarily, power supply noise is caused, which causes malfunction of the flash memory device. As the power supply voltage level supplied to the NOR type flash memory device is lowered, this problem will become more serious.
    According to the program method for reducing the area occupied by the charge pump, first, the data bits to be programmed are divided into a plurality of groups. Then, the data bits of each group are programmed simultaneously in the unit program time Tcycle (corresponding to the time required to fully program the flash memory cell to the target threshold voltage). For example, referring to FIG. 2, when each group is composed of two data bits, the maximum current consumed in the unit program time Tcycle is determined by the previous program method (the method of simultaneously programming the data bits in word units). In comparison, it is reduced to a maximum of 1/8, that is, about 400 mW. As a result, the size of the charge pump is reduced in proportion to the reduced maximum current. Here, when the peak current of the flash memory cell is Ipeak, as shown in FIG. 2, the maximum current of each unit program time Tcycle corresponds to twice the maximum current of the flash memory cell (2 × Ipeak). On the other hand, it can be seen that the total program time Tpgm is increased by 8 times (Tpgm = 1m × 8 = 8 = when Tcycle = 1cycle) compared to the previous program method.
    When a NOR-type flash memory device operates at a very low supply voltage (e.g. 2.0V or less), the charge pump generates a current and voltage (Vd) that is supplied to the drain region (4) of the flash memory cell during the program. The time required to do this will increase. On the other hand, in order to shorten the total program time, the size of the charge pump will be increased. In this case, when the NOR type flash memory device is highly integrated, the charge pump occupies a large area of the integrated circuit die. This means that a large area of integrated circuit die for the charge pump circuit reduces the die space available for flash memory cells and associated access circuits. After all, as it limits the overall storage capacity of the flash memory device, a large area of die space for the charge pump requires a significant increase in the overall size of the integrated circuit die (which means that the integrated circuit die becomes larger). .
    Embodiments of the present invention are described in detail below with reference to the accompanying drawings.
    <First Embodiment>
    Referring to FIG. 3, a diagram illustrating a relationship between a program time and a threshold voltage change of a flash memory cell is illustrated. In FIG. 3, the vertical axis represents the threshold voltage Vth of the flash memory cell, and the horizontal axis represents the program time of the flash memory cell represented by a log scale. Assume that a target threshold voltage (Vth_pgm) of a flash memory cell to be programmed is 8V, and a unit program time (Tcycle) required to program a flash memory cell is 1 ms. Under this assumption, it can be seen that the threshold voltage Vth of the flash memory cell to be programmed is increased to about 7V (about 85%) within 0.5 kHz, which is half of the unit program time Tcycle.
    Referring to FIG. 4, which shows a change in threshold voltage and cell current according to a program time, the threshold voltage Vth of a flash memory cell to be programmed is maintained until the voltage Vth1 during the first program time 0-T1 of FIG. 4. On the other hand, the cell current flowing through the flash memory cell decreases rapidly from the maximum current Ipeak to the current It1 during the first program time 0-T1. Then, during the second program time T1-Tcycle, the threshold voltage Vth of the flash memory cell is slowly increased from the voltage Vth1 to the target threshold voltage Vth_pgm, and the second program time T1-Tcycle. A significant amount of cell current is consumed during the cycle.
    As a result, as the threshold voltage Vth of the flash memory cell increases rapidly at the beginning of the unit program time Tcycle, as shown in FIGS. 3 and 4, the source region (from the drain region 4 through the channel region) The cell current flowing to 3) is drastically reduced. Here, it is apparent to those who have acquired the general knowledge in this field that the slope of increasing the threshold voltage is changed according to the characteristics of the flash memory cell. This means that the first program time (0-T1) becomes longer or shorter depending on the flash memory cell characteristics.
    A block diagram showing a NOR type flash memory device according to a first embodiment of the present invention is shown in FIG. The NOR-type flash memory device 100 includes a memory cell array 110, which, although not shown in the drawing, includes a plurality of word lines arranged along rows and a plurality arranged along columns. And a plurality of flash memory cells (or EEPROM cells) arranged in the intersecting regions of the word lines and the bit lines. One word line of the word lines is selected by the row decoder 120 according to a row address, and a group of bit lines of the bit lines are selected by the column decoder 130 and the column pass gate 140 according to the column address. Is selected by For example, eight bit lines are selected when programmed in byte units, and sixteen bit lines are selected when programmed in word units. Therefore, sixteen flash memory cells arranged in intersection regions of the selected word line and the selected bit line are selected.
    The NOR type flash memory device 100 is provided with a program interval control circuit 150, a data input buffer circuit 160, a selection circuit 170, a pump circuit 180, and a write driver circuit 190. In the data input buffer circuit 160, data bits of '0' or '1' are temporarily stored according to word units or byte units. The program section control circuit 150 sequentially generates pulse-shaped program section signals PGM_BLi while the program for the selected memory cells is performed. The program section control circuit 150 may be configured as, for example, a counter.
    Subsequently, the selection circuit 170 receives the program period signals PGM_BLi and the data bits Din_i, and selects the data line selection signals DLSELi corresponding to the selected bit lines, respectively (i = 0-15). Occurs. For example, when the program period signal PGM_BL0 is activated and the corresponding data bit Din_0 is the data bit to be programmed (eg, '0'), the data line selection signal DLSEL0 is activated. On the other hand, when the program period signal PGM_BL0 is activated and the data bit Din_0 is the program inhibited data bit (eg, '1'), the data line selection signal DLSEL0 is deactivated. According to this method, the remaining data line select signals DLSEL1 to DLSEL15 are also activated or deactivated.
    The pump circuit 180 provides the write driver circuit 190 with a drain voltage Vd and a current to be supplied to the selected bit line (s) while programming the selected memory cells. The write driver circuit 190 supplies the drain voltage Vd and the current from the pump circuit 180 to the selected bit lines in response to data line select signals DLSELi.
    An example of the pump circuit 180 is a U.S. titled "AUTO-PROGRAM CIRCUIT IN A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE." Patent No. 5,642,309, incorporated by reference.
    Assuming that the above-described NOR-type flash memory device performs a program operation in word units, a program method will be described according to the present invention. However, when the NOR-type flash memory device performs a program operation by byte unit, it is obvious that the program method of the present invention is also applied. The NOR-type flash memory device supports a read-write-write (RWW) operation mode in which a program operation and a read operation are simultaneously performed. READING AND WRITING "titled US Patent No. 5,867,430, incorporated by reference.
    6 is a diagram showing a relationship between a cell current and a program time according to the programming method of the first embodiment of the present invention. Prior to describing the program method according to the present invention, a time for which the threshold voltage Vth of the flash memory cell reaches a voltage (for example, 6-7V) lower than the target threshold voltage Vth_pgm is defined as the first program time ( T1) defines a time obtained by subtracting the first program time T1 from the unit program time Tcycle required to program a flash memory cell to a desired target threshold voltage Vth_pgm, respectively, as a second program time T2. do.
    When a program operation is started, one of the word lines of the word lines of the memory cell array 110 shown in FIG. 5 is selected by the row decoder 120 and the word of the bit lines connected to the array 110. A unit, that is, 16 bit lines are selected by the column decoder 130 and the column pass gate 140. As a result of this operation, sixteen flash memory cells, each arranged in intersection regions of the selected word line and the selected bit line, are selected. Although not shown in the figure, a high voltage of about 10V will be supplied to the word line commonly connected to the control gates of the selected flash memory cells.
    Then, when the first program interval signal PGM_BL0 from the program interval control circuit 150 transitions from the low level to the high level, the selection circuit 170 is temporary to the data input buffer circuit 160. The first data line selection signal DLSEL0 is activated in response to a first data bit (for example, logic '0') and the first program interval signal PGM_BL0 of the data bits to be programmed. This causes the drain voltage Vd and current from the pump circuit 180 through the write driver circuit 190 to be supplied to the first bit line corresponding to the first data bit of the selected bit lines. As a result, the first flash memory cell connected to the first bit line begins to be programmed. In this case, as described above, a cell current flowing through the first flash memory cell corresponds to a maximum current Ipeak of about 200 mA, and the first flash memory cell is targeted for the first program time T1. It will be programmed to a threshold voltage Vth1 lower than the threshold voltage Vth_pgm.
    Subsequently, as shown in FIG. 6, after the first program time T1 elapses, the first program section signal PGM_BL0 transitions from a high level to a low level. At the same time, the program section control circuit 150 activates a second program section signal PGM_BL1 indicating a program of a second data bit among the data bits to be programmed. Accordingly, the program operation of the second flash memory cell corresponding to the second data bit is performed through the same process as described above. Similarly, a cell current flowing through the second flash memory cell corresponds to a maximum current Ipeak of about 200 mA, and the second flash memory cell is also programmed to the threshold voltage Vth1 for the first program time T1. will be.
    Flash memory cells corresponding to the remaining data bits of the data bits to be programmed are also sequentially programmed to the threshold voltage Vth1 through the same process as described above. After all of the flash memory cells corresponding to the data bits to be programmed are sequentially programmed to a threshold voltage Vth1, the flash memory cells may be programmed simultaneously or divided into a plurality of groups according to the current capacity of the pump circuit 180. Can be. In this embodiment, assuming that the current capacity of the pump circuit 180 is Ipeak (about 200 mA), the number of data bits (N) to be programmed simultaneously is determined by the flash memory cell at the beginning of the second program time T2. It will be determined by the cell current It1 consumed and the current capacity Ipeak of the pump circuit 180 (It1 × N ≦ Ipeak). If N = 8, 16 flash memory cells are divided into two groups, and each group will be programmed as follows.
    As shown in FIG. 6, when the program interval signal PGM_BL16 from the program interval control circuit 150 is activated from the low level to the high level, a data line corresponding to one group of data bits to be programmed. Select signals DLSEL0 to DLSEL7 are simultaneously activated from the low level to the high level by the selection circuit 170. This is the first bit line through which the drain voltage Vd and current from the pump circuit 180 via the write driver circuit 190 respectively correspond to the activated signals DLSEL0-DLSEL7 of the selected bit lines. To the eighth bit line. As a result, the flash memory cells respectively connected to the first to eighth bit lines are simultaneously programmed from the threshold voltage Vth1 to the target threshold voltage Vth_pgm during the second program time T2 (T2 = Tcycle-T1). . Other groups of flash memory cells are also programmed simultaneously in the same manner as described above. In order to avoid duplication of explanation, the description thereof is omitted here.
    This series of steps completes the program operation. According to the first program method of the present invention, the total program time Tpgm is as follows.
    Here, N represents the number of data bits to be programmed, N = 8 in byte units, and N = 16 in word units. And, r represents the number of groups of flash memory cells to be programmed at the same time. As described above, this is determined according to the current It1 and the maximum current Ipeak. For example, when Tcycle = 1 ms, T1 = 0.5 ms, r = 2, the total program time Tpgm in word units is 9 ms (0.5 ms * 16 + 0.5 ms * 2).
    It can be seen from the program algorithm described above that the maximum current consumed during the program operation corresponds to the current Ipeak consumed by one flash memory cell. The size of the pump circuit 180 to be designed in accordance with the program method of the present invention is reduced by half compared to the method of programming two data bits simultaneously. As a result, even if the density of the NOR-type flash memory device is increased and the power supply voltage used in the memory device is lowered, it is possible to supply a sufficient amount of current necessary for the program without increasing the size of the integrated circuit die due to the pump circuit 180. .
    <2nd Example>
    A block diagram showing a NOR type flash memory device according to a second preferred embodiment of the present invention is shown in FIG. In FIG. 7, the same components as those of FIG. 5 are denoted by the same reference numerals, and a description thereof will be omitted. In a second embodiment, the drain voltage Vd supplied to the selected bit line is at a first program time necessary to program a flash memory cell to a threshold voltage lower than a target threshold voltage and the flash memory cell at a low threshold voltage. It differs from the first embodiment in that it differs in the second program time required to program up to the target threshold voltage.
    Referring to FIG. 7, the pump circuit 180 according to the second embodiment of the present invention writes the drain voltage Vd to be transmitted to the bit line in response to the control signals Svd1 and Svd2. ). Specifically, the drain voltage Vd supplied from the pump circuit 180 to the write driver circuit 190 when the control signal Svd1 is activated is the pump circuit 180 when the control signal Svd2 is activated. ) Is lower than the drain voltage Vd supplied to the write driver circuit 190. The pump circuit 180, as shown in FIG. 8, consists of a charge pump 181, a regulator 182, first and second detectors 183 and 184, and an oscillator 185. It is.
    The charge pump 181 performs a pumping operation in response to the oscillation signal OSC from the oscillator 185 to generate a voltage Vout to be supplied to the drain of the flash memory cell. The oscillator 185 operates in response to the oscillation enable signal OSCE. The pump 181 is composed of a plurality of pump stages (pump stages) connected in series, which is entitled "CHARGE PUMP WHICH OPERATES ON A LOW VOLTAGE POWER SUPPLY". Patent No. 5,280,420, incorporated by reference. The regulator 182 is for stabilizing the unstable voltage Vout generated from the charge pump 181, and the output voltage Vd of the regulator 182, i.e., the drain voltage, is transferred to the write driver circuit 190. Supplied. Then, the first detector 183 determines whether the output voltage Vd of the regulator 182 is higher than a predetermined voltage Vd1, for example, 4.5V, when the control signal Svd1 is activated. Detect. If Vd &gt; Vd1, the oscillator 182 is deactivated by the first detector 184, so that the pumping operation of the charge pump 182 is stopped. Similarly, the second detector 184 determines whether the output voltage Vd of the regulator 182 is higher than a predetermined voltage Vd2, for example 5.5V, when the control signal Svd2 is activated. Detect. If Vd &gt; Vd2, the oscillator 182 is deactivated by the second detector 185, and as a result the pumping operation of the charge pump 182 is stopped.
    Referring to FIG. 9, which illustrates a change in the threshold voltage and a program time of a flash memory cell according to a change in the voltage Vd supplied to a bit line, when the flash memory cell has a threshold voltage (Vd = Vd2 (eg, 5.5V)). The first program time T1 ′ required to be programmed up to Vth1) corresponds to the time described in the first embodiment of the present invention (T1) when Vd = Vd1 (e.g. 4.5V). Shorter than As can be seen from this result, the total program time Tpgm can be shortened by increasing the voltage Vd supplied to the drain of the flash memory cell. As shown in FIG. 9, the cell current flowing through the flash memory cell when Vd = Vd2 also corresponds to the maximum current Ipeak.
    As shown in FIG. 10A showing the current supply capability of the charge pump, as the output voltage Vout from the charge pump 182 becomes high, the output current Iout from the charge pump 182 is increased. Decreases. For example, if the supply voltage Vcc is 2V and the charge pump 182 is composed of eight series connected pump stages, the output current when the output voltage Vout of the charge pump 182 is 4.5V. (Iout) is about 200 ms. On the other hand, when the output voltage Vout of the charge pump 182 is increased to 5.5V, the output current Iout is reduced to about 150 mA.
    As described above, since the cell current flowing through the flash memory cell when Vd = Vd2 also corresponds to the maximum current Ipeak, the number of pump stages constituting the charge pump 180 according to the second embodiment is It should be increased compared with that of the first embodiment. For example, in order to supply an output voltage Vout of 5.5V and an output current Iout of about 200 mA, as shown in FIGS. 10B and 10C, the charge pump 182 is connected to 10 series connected pump stages. It must be constructed. In this case, the charge pump 182 consisting of ten pump stages can supply an output current Iout of about 240 mA when Vd = Vd1. This means that the number of data bits to be programmed simultaneously during the second program time T1 -Tcycle increases. On the other hand, the size of the charge pump 182 according to the second embodiment of the present invention will be slightly increased in proportion to the two pump stages added in comparison with that according to the first embodiment (Vd = Vd1). .
    11 is a view showing a relationship between a cell current and a program time according to the program method of the second embodiment of the present invention. Hereinafter, a second program method of the present invention will be described based on the reference figures.
    When a program operation is started, one of the word lines of the word lines of the memory cell array 110 shown in FIG. 7 is selected by the row decoder 120 and the word of the bit lines connected to the array 110. A unit, that is, 16 bit lines are selected by the column decoder 130 and the column pass gate 140. As a result of this operation, sixteen flash memory cells are selected that are arranged in intersections of the selected word line and the selected bit lines.
    Then, when the first program interval signal PGM_BL0 from the program interval control circuit 150 transitions from the low level to the high level, the selection circuit 170 is temporary to the data input buffer circuit 160. In response to the first data bit and the first program interval signal PGM_BL0 of the data bits to be programmed, the first data line selection signal DLSEL0 is activated. This allows the drain voltage (Vd = Vd2) and current (Iout) from the pump circuit 180 to be supplied to the first bit line corresponding to the first data bit of the selected bit lines through the write driver circuit 190. do. As a result, the first flash memory cell connected to the first bit line begins to be programmed. In this case, as described above, a cell current flowing through the first flash memory cell corresponds to a peak current Ipeak of about 200 mA, and the first flash memory cell is thresholded for a first program time T1 ′. It will be programmed up to voltage Vth1. As described above, the time T1 'is shorter than the time T1 of FIG. 6 (T1' &lt; T1).
    Subsequently, as shown in FIG. 11, after the first program time T1 ′ has elapsed, the first program interval signal PGM_BL0 transitions from a high level to a low level. At the same time, the program section control circuit 150 activates a second program section signal PGM_BL1 indicating a program of a second data bit among the data bits to be programmed. Accordingly, the program operation of the second flash memory cell corresponding to the second data bit is performed through the same process as described above. Similarly, a cell current flowing through the second flash memory cell corresponds to a maximum current Ipeak of about 200 mA and the second flash memory cell is programmed to a threshold voltage Vth1 for a first program time T1 '. will be.
    Thereafter, flash memory cells corresponding to the remaining data bits of the data bits to be programmed are also sequentially programmed to the threshold voltage Vth1 through the same process as described above. After all of the flash memory cells corresponding to the data bits to be programmed are sequentially programmed to a threshold voltage Vth1, the flash memory cells may be programmed simultaneously or divided into a plurality of groups according to the current capacity of the pump circuit 180. Can be. Assuming that the current capacity of the charge pump 182 is Ipeak (240 mA in this embodiment), the number of data bits N to be programmed simultaneously is consumed by the flash memory cell at the beginning of the second program time T2. It will be determined by the cell current It1 and the current capacity Ipeak of the pump circuit 180 (It1 × N ≦ Ipeak). If N = 16, 16 flash memory cells will be programmed simultaneously. On the other hand, when N = 8, 16 flash memory cells are divided into two groups, and each group will be sequentially programmed. The program operation in the latter case is as follows.
    As shown in FIG. 11, when the program interval signal PGM_BL16 from the program interval control circuit 150 is activated from the low level to the high level, a data line corresponding to one group of data bits to be programmed. Select signals DLSEL0 to DLSEL7 are simultaneously activated from the low level to the high level by the selection circuit 160. This causes the drain driver Vd = Vd1 and a current having a level lower than the drain voltage Vd2 used at the first program time T1 through the write driver circuit 190 to activate the selected ones of the selected bit lines. The first and eighth bit lines respectively correspond to (DLSEL0)-(DLSEL7). As a result, the flash memory cells respectively connected to the first to eighth bit lines are simultaneously programmed from the threshold voltage Vth1 to the target threshold voltage Vth_pgm during the second program time T2 (T2 = Tcycle-T1). . Other groups of flash memory cells may also be programmed in the same manner as described above. In order to avoid duplication of explanation, the description thereof is omitted here.
    The program operation is terminated according to this series of processes. According to the second program method of the present invention, the total program time Tpgm is as follows.
    Here, N represents the number of data bits to be programmed, N = 8 in byte units, and N = 16 in word units. And, r represents the number of groups of flash memory cells to be programmed at the same time. As described above, this is determined according to the current It1 and the peak current Ipeak. For example, when T1 = 0.5 ms, T1 '= 0.3 ms, T2 = 1 ms, r = 2, the total program time Tpgm in word units is shortened to 5.8 ms (0.3 ms * 16 + 0.5 ms * 2). . As a result, the total program time Tpgm according to the second program method of the present invention can be shortened by {(T1-T1 ') * 16 + T2 * (r-r')} compared to that of the first embodiment.
    Here, r represents the number of groups of data bits to be programmed simultaneously according to the first embodiment, and r 'represents the number of groups of data bits to be programmed simultaneously according to the second embodiment.
    It can be seen from the program algorithm described above that the maximum current consumed during the program operation corresponds to the maximum current Ipeak of the flash memory cell. The size of the pump circuit 180 to be designed according to the second embodiment of the present invention is significantly reduced compared to the pump circuit designed according to the method of programming two data bits simultaneously. Schematically, the size of the pump circuit according to the second embodiment of the present invention corresponds to about 63% of the size of the pump circuit designed according to the method of programming two data bits simultaneously. As a result, even if the density of the NOR-type flash memory device increases and the power supply voltage used in the memory device decreases, it is possible to supply a sufficient amount of current required for the program without increasing the size of the integrated circuit die due to the pump circuit.
    In addition, as described above, since the NOR-type flash memory device has the RWW operation mode, a program operation is performed in one bank and a read operation is performed in another bank. It is well known to those skilled in the art that power supply noise can occur when generating the high voltage and drain current required for a program. Power supply noise during programming affects read operations performed in different banks. Therefore, it is preferable that the maximum value of the drain current, that is, the maximum current, which causes the power source noise is small. As a result, by using the first and second program methods of the present invention, the maximum current that causes power supply noise is reduced.
    As described above, the maximum current consumed within the unit program time is reduced by using the program methods of the present invention. Therefore, even if the density of the NOR-type flash memory device is increased and the power supply voltage used in the memory device is lowered, it is possible to supply a sufficient amount of current required for the program without increasing the size of the integrated circuit die due to the charge pump circuit. In addition, by using the program methods of the present invention, the total program time can also be shortened.
    权利要求:
    Claims (18)
    [1" claim-type="Currently amended] A program method of a flash memory device having an array of memory cells arranged in rows and columns:
    Selecting at least one memory cell of the memory cells;
    And programming the selected memory cell for a first time up to a predetermined threshold voltage lower than a target threshold voltage.
    [2" claim-type="Currently amended] The method of claim 1,
    And said flash memory device is a NOR type flash memory device.
    [3" claim-type="Currently amended] A program method of a flash memory device having an array of memory cells arranged in rows and columns:
    Selecting at least two memory cells of the memory cells;
    A second step of sequentially programming each of the selected memory cells to a predetermined threshold voltage lower than a target threshold voltage for a first time;
    And programming the selected memory cells simultaneously for a second time from the predetermined threshold voltage to the target threshold voltage.
    [4" claim-type="Currently amended] The method of claim 3, wherein
    And each of the columns corresponding to each of the selected memory cells is supplied with a drain voltage having a different level from each other in the second step and the third step.
    [5" claim-type="Currently amended] The method of claim 4, wherein
    And the drain voltage supplied to the columns corresponding to the selected memory cells in the second step is higher than the drain voltage supplied to the columns corresponding to the selected memory cells in the third step.
    [6" claim-type="Currently amended] The method of claim 4, wherein
    And the drain voltage supplied to the columns corresponding to the selected memory cells in the second step is the same as the drain voltage supplied to the columns corresponding to the selected memory cells in the third step.
    [7" claim-type="Currently amended] The method of claim 3, wherein
    Classifying the selected memory cells having the predetermined threshold voltage into at least two groups;
    And a fifth step of sequentially programming each group of the selected memory cells such that the selected memory cells have the target threshold voltage, wherein the selected memory cells of each group are programmed simultaneously for the second time. Program method characterized by the above.
    [8" claim-type="Currently amended] The method of claim 7, wherein
    And each of the columns corresponding to each of the selected memory cells receives a drain voltage having a different level from each other in the second step and the fifth step.
    [9" claim-type="Currently amended] The method of claim 8,
    And the drain voltage supplied to the columns corresponding to the selected memory cells in the second step is higher than the drain voltage supplied to the columns corresponding to the selected memory cells in the fifth step.
    [10" claim-type="Currently amended] The method of claim 8,
    And the drain voltage supplied to the columns corresponding to the selected memory cells in the second step is the same as the drain voltage supplied to the columns corresponding to the selected memory cells in the fifth step.
    [11" claim-type="Currently amended] The method of claim 3, wherein
    The unit program time of each of the memory cells is a sum of the first time and the second time.
    [12" claim-type="Currently amended] An array of a plurality of memory cells arranged in rows and columns;
    A row selection circuit for selecting one of the rows;
    A column selection circuit for selecting a group of columns of the columns;
    A pump circuit for generating a drain voltage to be supplied to the selected columns while a program operation is performed;
    A program interval control circuit for generating first and second program interval signals representing a program interval of memory cells designated by the selected rows and columns;
    A selection circuit for generating selection signals for designating the selected columns in response to data bits to be programmed in the designated memory cells and the first and second program interval signals;
    A write driver circuit for driving the selected columns to the drain voltage from the pump circuit in response to the selection signals,
    The program interval control circuit generates the first program interval control signals corresponding to each of the selected memory cells such that each of the selected memory cells is sequentially programmed to a predetermined threshold voltage lower than a target threshold voltage. The NOR flash memory device generating the second program section signal to be programmed simultaneously from the predetermined threshold voltage to the target threshold voltage.
    [13" claim-type="Currently amended] The method of claim 12,
    The first drain voltage supplied to the selected columns during the first time that the selected memory cells are programmed to the predetermined threshold voltage is during the second time that the selected memory cells are programmed to the target threshold voltage at the predetermined threshold voltage. A NOR flash memory device different from the second drain voltage supplied to the selected columns.
    [14" claim-type="Currently amended] The method of claim 13,
    And the second drain voltage is higher than the first drain voltage.
    [15" claim-type="Currently amended] The method of claim 13,
    The unit program time of each of the selected memory cells is a sum of the first time and the second time.
    [16" claim-type="Currently amended] An array of a plurality of memory cells arranged in rows and columns;
    A row selection circuit for selecting one of the rows;
    A column selection circuit for selecting a group of columns of the columns;
    A pump circuit for generating a drain voltage to be supplied to the selected columns while a program operation is performed;
    A program interval control circuit for generating first and second program interval signals representing a program interval of memory cells designated by the selected rows and columns;
    A selection circuit for generating selection signals for designating the selected columns in response to data bits to be programmed in the designated memory cells and the first and second program interval signals;
    A write driver circuit for driving the selected columns to the drain voltage from the pump circuit in response to the selection signals,
    The program period control circuit generates the first program period control signals corresponding to each of the selected memory cells such that each of the selected memory cells is sequentially programmed to a predetermined threshold voltage lower than a target threshold voltage, and the predetermined threshold voltage is generated. And generating the second program interval control signals corresponding to the groups so that a plurality of groups of the selected memory cells are sequentially programmed, wherein the selected memory cells of each group are programmed simultaneously.
    [17" claim-type="Currently amended] The method of claim 16,
    The first drain voltage supplied to the selected columns during the first time that the selected memory cells are programmed to the predetermined threshold voltage is during the second time that the selected memory cells are programmed to the target threshold voltage at the predetermined threshold voltage. And a second program voltage different from a second drain voltage supplied to the selected columns, wherein a unit program time of each of the selected memory cells is a sum of the first time and the second time.
    [18" claim-type="Currently amended] The method of claim 17,
    And the second drain voltage is higher than the first drain voltage.
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    同族专利:
    公开号 | 公开日
    US6212101B1|2001-04-03|
    TW526495B|2003-04-01|
    JP3854042B2|2006-12-06|
    CN1282077A|2001-01-31|
    FR2798218B1|2007-04-27|
    DE10034743A1|2001-02-15|
    DE10034743B4|2006-08-31|
    FR2798218A1|2001-03-09|
    CN1542858A|2004-11-03|
    JP2001052486A|2001-02-23|
    KR100322470B1|2002-02-07|
    CN1168095C|2004-09-22|
    CN1542858B|2010-05-26|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-07-22|Application filed by 윤종용, 삼성전자 주식회사
    1999-07-22|Priority to KR1019990029786A
    2001-02-15|Publication of KR20010010734A
    2002-02-07|Application granted
    2002-02-07|Publication of KR100322470B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019990029786A|KR100322470B1|1999-07-22|1999-07-22|High-density nor-type flash memory device and a programming method thereof|
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